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inas/gaas heteroepitaxy: real-time reflectance-anisotropy spectroscopy

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dc.contributor.advisor Lastras Martinez, Alfonso
dc.contributor.author Armenta Franco, Abril
dc.coverage.temporal México. San Luis Potosí. San Luis Potosí es_MX
dc.date.accessioned 2020-07-23T14:01:22Z
dc.date.available 2020-07-23T14:01:22Z
dc.date.issued 2018
dc.identifier.uri https://repositorioinstitucional.uaslp.mx/xmlui/handle/i/5792
dc.description.abstract Reflectance Difference Spectroscopy (RDS) is an in-situ and in real-time measurement technique used to study optical anisotropies during InAs/GaAs(001) growth. Studies were performed in a Molecular Beam Epitaxy (MBE) ultra-high vaccum chamber under different As overpressures and several substrate temperatures. Reflectance Difference Spectroscopy was used to acquire the experimental data, which were measured with an acquisition time of 100 ms. As a mathematical tool, Singular Value Decomposition (SVD) was used to analyse the measured spectra in order to obtain representative bases Si(E) which with a linear combination of them, each of the spectra (S(E,t)) is reproduced. S(E,t)= Pi 1 ci(t)Si(E) is the mathematical representation of the fittings for each experimental measured data. Physical Models such as Strain are used to fit the obtained representative bases. es_MX
dc.description.statementofresponsibility Grupos de la comunidad es_MX
dc.description.statementofresponsibility Investigadores es_MX
dc.description.statementofresponsibility Estudiantes es_MX
dc.language Inglés es_MX
dc.relation.ispartofseries Facultad de Ciencias es_MX
dc.rights Acceso Abierto es_MX
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/4.0 es_MX
dc.subject Semiconductores es_MX
dc.subject.classification CIENCIAS FÍSICO MATEMATICAS Y CIENCIAS DE LA TIERRA es_MX
dc.subject.classification INGENIERÍA Y TECNOLOGÍA es_MX
dc.title inas/gaas heteroepitaxy: real-time reflectance-anisotropy spectroscopy es_MX
dc.type Tesis de doctorado es_MX


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